| PART |
Description |
Maker |
| KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16）的CMOS掩模ROM2兆位Mx8 / 2Mx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AT49BV321T-85CI AT49BV321T-85TI AT49BV320T-85TI AT |
EEPROM|FLASH|2MX16|CMOS|TSSOP|48PIN|PLASTIC
Metal Film Resistor - RN 1/4 T1 18 5% A
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | TSSOP封装| 48PIN |塑料
EEPROM|FLASH|2MX16|CMOS|BGA|46PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16 |的CMOS | BGA封装| 46PIN |塑料
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Microchip Technology, Inc.
Anpec Electronics, Corp.
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| DA28F320J5-120 DT28F320J5A-120 DA28F640J5A-150 DA2 |
EEPROM|FLASH|2MX16/4MX8|CMOS|SOP|56PIN|PLASTIC
5 Volt Intel StrataFlash? Memory
5 Volt Intel StrataFlash庐 Memory
|
Intel Corporation
|
| AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| UPD4632312F9-BE95X-BT3 UPD4632312F9-CE10X-BT3 UPD4 |
Integrated H-bridge with sleep mode
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|77PIN|PLASTIC 伪静态内存| 2MX16 |的CMOS | BGA封装| 77PIN |塑料
|
Amphenol, Corp.
|
| MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
| K1S321615M K1S321615M-E K1S321615M-EE10 |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic
Samsung semiconductor
|
